481769
窒化ガリウム
99.9% trace metals basis
別名:
窒化ガリウム, 窒化ガリウム（GaN）
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この商品について
化学式:
GaN
CAS番号:
分子量:
83.73
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
247-129-0
MDL number:
Quality Segment
assay
99.9% trace metals basis
form
powder
reaction suitability
core: gallium
mp
800 °C (lit.)
SMILES string
N#[Ga]
InChI
1S/Ga.N
InChI key
JMASRVWKEDWRBT-UHFFFAOYSA-N
Application
窒化ガリウム（GaN）は、ワイドバンドギャップ半導体材料であり、発光ダイオード（LED）や電界効果トランジスター（FET）などのさまざまな電子機器の開発に使用できます。また、スピントロニクスに基づく用途の遷移金属ドーパントとしても使用できます。
signalword
Warning
hcodes
Hazard Classifications
Skin Sens. 1
保管分類
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, type N95 (US)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating