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Merck

203424

Indium(III) oxide

99.998% trace metals basis

Synonym(s):

Indium oxide, Diindium trioxide, Indium sesquioxide

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About This Item

Empirical Formula (Hill Notation):
In2O3
CAS Number:
Molecular Weight:
277.63
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
215-193-9
MDL number:
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Quality Level

vapor pressure

<0.01 mmHg ( 25 °C)

assay

99.998% trace metals basis

form

powder

composition

In₂O₃

reaction suitability

reagent type: catalyst
core: indium

density

7.18 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[In]O[In]=O

InChI

1S/2In.3O

InChI key

SHTGRZNPWBITMM-UHFFFAOYSA-N

Application

  • Synthesis and Characterization: The development of gold nanoclusters on the surface of tin and indium oxide films, synthesizing new materials for advanced applications (Korotcenkov et al., 2014).
  • Photocatalysis: Using nitrogen/sulfur-codoped carbon-coated indium oxide nanoparticles as excellent photocatalysts, providing insights into environmental and energy applications (Sun et al., 2019).


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Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

Class I Designated Chemical Substances

prtr

Substances Subject to be Indicated Names

ishl_indicated

Substances Subject to be Notified Names

ishl_notified

203424-5G:4.548173315003E12 + 203424-25G:4.54817331499E12

jan



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Articles

シラン前駆体から製造された自己組織化ナノ誘電体を用いた多層ゲート誘電膜の可能性と展望を簡単にまとめました。

スペクトル変換におけるランタノイドイオンは、光子変換によって太陽電池の効率を高めます。

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

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Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode