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Merck

303518

Tantalum oxide

99% trace metals basis

Synonym(s):

Ditantalum pentaoxide, Tantala, Tantalum(V) oxide, Tantalum pentoxide

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About This Item

Linear Formula:
Ta2O5
CAS Number:
1314-61-0
Molecular Weight:
441.89
NACRES:
NA.23
PubChem Substance ID:
24858127
UNSPSC Code:
12352303
EC Number:
215-238-2
MDL number:
MFCD00011254

Key Documents

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Product Name

Tantalum(V) oxide, 99% trace metals basis

InChI key

PBCFLUZVCVVTBY-UHFFFAOYSA-N

InChI

1S/5O.2Ta

SMILES string

O=[Ta](=O)O[Ta](=O)=O

assay

99% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: tantalum

density

8.2 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

Quality Level

100

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General description

Tantalum pentoxide is dielectric in nature making it useful for making capacitors in the electronics industry.

Application

Tantalum oxide is intermixed with silicon in gate dielectric structures. It may be used to synthesize hexagonally packed mesoporous tantalum oxide molecular sieves.Ion-beam sputter deposition of tantalum oxide films was investigated for possible optical coating applications.It may be used in making optical glass for lenses and in electronic circuits.

Storage Class

11 - Combustible Solids

wgk

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

Substances Subject to be Indicated Names

ishl_indicated

Substances Subject to be Notified Names

ishl_notified

303518-100G:4548173936413 + 303518-BULK: + 303518-VAR: + 303518-25G:4548173936420

jan

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Certificates of Analysis (COA)

Lot/Batch Number
MKCP0622
MKCN8315
MKCL4098
MKCK7401
MKCK3930

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Synthesis and characterization of hexagonally packed mesoporous tantalum oxide molecular sieves.
Antonelli DM and Ying JY
Chemistry of Materials, 8(4), 874-881 (1996)
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures.
Alers GB, et al.
Applied Physics Letters, 73(11), 1517-1519 (1998)
Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering.
H Demiryont et al.
Applied optics, 24(4), 490-490 (1985-02-15)

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