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Merck

544876

Indium tin oxide

nanopowder, <50 nm particle size

Synonym(s):

ITO

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About This Item

CAS Number:
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352302
MDL number:
Technical Service
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form

nanopowder

Quality Level

composition

In2O3, 90% , SnO2, 10%

reaction suitability

core: indium, core: tin

surface area

27 m2/g

particle size

<50 nm

mp

1910 °C (lit.)

density

1.2 g/mL at 25 °C (lit.)

SMILES string

O=[SnH2].O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O

InChI

1S/2In.5O.Sn

InChI key

LNNWKAUHKIHCKO-UHFFFAOYSA-N



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wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves

pictograms

Health hazard

signalword

Danger

hcodes

Hazard Classifications

STOT RE 1 Inhalation

target_organs

Lungs

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects


Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

544876-25G:4.548173313139E12 + 544876-5G:4.548173313146E12

jan

Class I Designated Chemical Substances

prtr

Substances Subject to be Indicated Names

ishl_indicated

Substances Subject to be Notified Names

ishl_notified



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Articles

シラン前駆体から製造された自己組織化ナノ誘電体を用いた多層ゲート誘電膜の可能性と展望を簡単にまとめました。

TiO2は、電子工学的には広いバンドギャップ半導体とメモリスタ特性を示し、光学的には高い不透明性と紫外吸収性を示します。

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

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