Skip to Content
Merck

553468

Tris(tert-butoxy)silanol

99.999%

Synonym(s):

TBS

Sign In to View Organizational & Contract Pricing.

Select a Size

About This Item

Linear Formula:
((CH3)3CO)3SiOH
CAS Number:
18166-43-3
Molecular Weight:
264.43
NACRES:
NA.23
PubChem Substance ID:
24879332
UNSPSC Code:
12352103
MDL number:
MFCD00271024

Key Documents

View All Documentation
Technical Service
Need help? Our team of experienced scientists is here for you.
Let Us Assist
Technical Service
Need help? Our team of experienced scientists is here for you.
Let Us Assist

InChI

1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3

SMILES string

CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C

InChI key

HLDBBQREZCVBMA-UHFFFAOYSA-N

assay

99.999%

form

solid

bp

205-210 °C (lit.)

mp

63-65 °C (lit.)

Quality Level

100

Looking for similar products? Visit Product Comparison Guide

Related Categories

General description

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.

Application

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

553468-5G: + 553468-25G: + 553468-BULK: + 553468-VAR:

jan

Choose from one of the most recent versions:

Certificates of Analysis (COA)

Lot/Batch Number
SHBL5061
SHBL0342
SHBK7740
SHBK3444
SHBK3445

Don't see the Right Version?

If you require a particular version, you can look up a specific certificate by the Lot or Batch number.

Search for a COA

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Jonathan Stewart et al.
Modern pathology : an official journal of the United States and Canadian Academy of Pathology, Inc, 28(3), 428-436 (2014-09-27)
The oncogenic role of WNT is well characterized. Wntless (WLS) (also known as GPR177, or Evi), a key modulator of WNT protein secretion, was recently found to be highly overexpressed in malignant astrocytomas. We hypothesized that this molecule may be
Pedro A Dionísio et al.
Neurobiology of aging, 36(1), 228-240 (2014-12-03)
Alzheimer's disease (AD) is a neurodegenerative disorder hallmarked by the accumulation of extracellular amyloid-β (Aβ) peptide and intraneuronal hyperphosphorylated tau, as well as chronic neuroinflammation. Tauroursodeoxycholic acid (TUDCA) is an endogenous anti-apoptotic bile acid with potent neuroprotective properties in several
View All Related Papers

Articles

窒化シリコンの原子層堆積法：前駆体化学の概要

半導体デバイス作製に非常に重要な材料である窒化シリコン（SiNx）のALD用前駆体化合物について解説いただきました。

一置換および二置換アルコキシシロキサンを使用した融解ゲルの合成

一置換および二置換アルコキシシロキサンから合成された融解ゲルは、生物医学、電子工学、光電子工学などへの応用が期待されています。

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.

Silicon Nitride Atomic Layer Deposition: A Brief Review of Precursor Chemistry

atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer

See All

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service