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Merck

647675

Silicon

greener alternative

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
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Quality Level

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

contains

boron as dopant

greener alternative product characteristics

Design for Energy Efficiency
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diam. × thickness

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

semiconductor properties

<100>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Application

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

Packaging

1EA refers to 1 wafer and 5EA refers to 5 wafers


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Storage Class

13 - Non Combustible Solids

wgk

nwg

ppe

Eyeshields, Gloves, type N95 (US)


Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

Substances Subject to be Indicated Names

ishl_indicated

Substances Subject to be Notified Names

ishl_notified



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Protocols

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

本フォトレジストキットには、リソグラフィープロセスにおける各ステップで必要な材料が含まれています。各材料は、すぐにお使いいただけるようにあらかじめ計量されており、エッチング液については、様々な基板に適切なものをお選びいただけるように、個別に販売しています。

Articles

一置換および二置換アルコキシシロキサンから合成された融解ゲルは、生物医学、電子工学、光電子工学などへの応用が期待されています。

Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.


Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of