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Merck

775703

Molybdenum(VI) oxide

nanopowder, 100 nm (TEM), 99.5% trace metals basis

Synonym(s):

Molybdena, Molybdic anhydride, Molybdenum trioxide

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About This Item

Linear Formula:
MoO3
CAS Number:
Molecular Weight:
143.94
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352302
EC Number:
215-204-7
MDL number:
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Quality Level

assay

99.5% trace metals basis

form

nanopowder

particle size

100 nm (TEM)

mp

795 °C (lit.)

SMILES string

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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Application

Precursor to LAMOX fast ion conductors and superconductors.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13 and Mo19 clusters. The new cluster product is a small band gap semiconductor.
Molybdenum oxide nanoparticles have been studied in photocatalytic systems, as gas sensors for automobiles and as anodes in lithium ion batteries.

pictograms

Health hazardExclamation mark

signalword

Warning

Hazard Classifications

Carc. 2 - Eye Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

11 - Combustible Solids

wgk

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable


Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

Class I Designated Chemical Substances

prtr

Substances Subject to be Indicated Names

ishl_indicated

Substances Subject to be Notified Names

ishl_notified

775703-BULK: + 775703-VAR: + 775703-5G:4548173926063

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Prasad, A. K.; et al.
J. Mater. Sci., 38, 4347-4352 (2003)
Lee, S.H.; et al.
Advanced Materials, 20, 3627-3632 (2008)
Song, K.Y.; et al.
Chemistry of Materials, 13, 2349-2355 (2001)
Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to

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