647543
ケイ素
wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
別名:
Silicon element
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この商品について
化学式:
Si
CAS番号:
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
231-130-8
MDL number:
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
does not contain
dopant
greener alternative product characteristics
Design for Energy Efficiency
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sustainability
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diam. × thickness
3 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<111>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
Pタイプ伝導体です。0渦流欠陥。エッチピッチ密度(EPD) < 100 (cm-2)。抵抗率 102 - 104 Ω-cm
酸素含有量: ≤ 1~1.8 x 1018 /cm3; 炭素含有量: ≤ 5 x 1016 /cm3; 結晶径: 1~8 ″。
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flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
保管分類
11 - Combustible Solids
wgk
nwg
適用法令
試験研究用途を考慮した関連法令を主に挙げております。化学物質以外については、一部の情報のみ提供しています。 製品を安全かつ合法的に使用することは、使用者の義務です。最新情報により修正される場合があります。WEBの反映には時間を要することがあるため、適宜SDSをご参照ください。
名称等を表示すべき危険物及び有害物
ishl_indicated
名称等を通知すべき危険物及び有害物
ishl_notified
647543-1EA: + 647543-5EA: + 647543-VAR: + 647543-BULK:
jan
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image