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Merck

553468

Tris(tert-butoxy)silanol

99.999%

동의어(들):

TBS

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제품정보 (DICE 배송 시 비용 별도)

Linear Formula:
((CH3)3CO)3SiOH
CAS 번호:
18166-43-3
Molecular Weight:
264.43
NACRES:
NA.23
PubChem Substance ID:
24879332
UNSPSC Code:
12352103
MDL number:
MFCD00271024

주요 문서

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InChI

1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3

SMILES string

CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C

InChI key

HLDBBQREZCVBMA-UHFFFAOYSA-N

assay

99.999%

form

solid

bp

205-210 °C (lit.)

mp

63-65 °C (lit.)

Quality Level

100

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관련 카테고리

General description

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.

Application

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.

저장 등급

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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시험 성적서(COA)

Lot/Batch Number

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문서 라이브러리에서 최근에 구매한 제품에 대한 문서를 찾아보세요.

문서 라이브러리 방문

Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Jonathan Stewart et al.
Modern pathology : an official journal of the United States and Canadian Academy of Pathology, Inc, 28(3), 428-436 (2014-09-27)
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Neurobiology of aging, 36(1), 228-240 (2014-12-03)
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문서

Silicon Nitride Atomic Layer Deposition: A Brief Review of Precursor Chemistry

atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer

Progress in Spintronic Materials

Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.

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